AN INTRODUCTION TO THE THEORY AND PRACTICE OF TRANSISTORSPDF电子书下载

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PART 1 THE THEORETICAL BACKGROUND:THE PHYSICS OF SEMICONDUCTORS AND TRANSISTORS 1

1．The Relevant Basic Properties of Semiconductors 3

1．1．Electrical conduction due to all types of mobile particles 3

1．2．Wave-mechanical description of the extra-nuclear electronic states of the atom 4

1．3．Wave-mechanics of electrons in a crystal 7

1．4．Occupation of allowed states in the conduction and valence bands 11

1．5．Occupation of allowed states in the forbidden band 22

1．6．Nature of ordinary donor and acceptor states 26

1．7．Mobility of the carriers 28

1．8．Further considera-tion of effective masses and energy gaps 38

1．9．The life-times of electrons in the conduction band and of holes in the valence band 47

1．10．The steady-state lifetimes 53

1．11．The small-signal transient lifetimes 58

1．12．The large-signal transient lifetimes 60

1．13．Direct photon-radiative recombination 62

1．14．Surface recombination 63

1．15．Non-recombination traps in bulk germanium and silicon 68

1．16．References 70

2．The p-n Junction 72

2．1．The p-n junction without external bias 72

2．2．Digression on imrefs and diffusion 80

2．3．The p-n junc-tion with reverse bias 83

2．4．The p-n junction with forward bias 87

2．5．References 91

3．The Minority Carrier Junction Transistor 92

3．1．Fundamental relationships between the currents and voltages of a pair of p-n junctions arbitrarily loca-ted on a uniformly n-type or p-type material 92

3．2．Magnitudes and frequency-dependences of the admit-tances for two simplified transistor structures 105

3．3．Expression of the static characteristics of the ideal transistor in terms of the circuit e．m．f．s instead of terminal voltages 109

3．4．Departures from the ideal tran-sistor due to series resistances and junction capacit-ances 110

3．5．Departures from the ideal transistor due to the voltage-dependence of base-width 115

3．6．Punch-through,Zener and avalanche effects 117

3．7．High-current effects 124

3．8．The effects of a graded resistivity in the base region 125

3．9．References 129

PART 2 PRACTICE:TECHNOLOGY,PROPERTIES AND APPLICATIONS 131

4．Technology 133

4．1．The preparation of semiconductors for diodes and transistors 133

4．1．1．Introduction 131

4．1．2．The preparation of germanium 131

4．1．3．The preparation of silicon 140

4．2．The fabrication of point devices 144

4．2．1．Point-contact diodes 144

4．2．2．Point-contact transistors 146

4．3．Junction techniques and devices 150

4．3．1．Grown junctions and grown transistors-Dope growing-Rate growing 150

4．3．2．The melt-back and melt-quench techniques 154

4．3．3．The alloying technique 157

4．3．4．The surface-barrier tran-sistor 165

4．3．5．Diffusion techniques and diffused devices-Diffusion-Diffused diodes-Diffused transistors 166

4．3．6．Mixed techniques 173

4．3．7．A comparison of the various techniques 177

4．4．References 178

5．The Electrical Properties of Transistors and of Semicon-ductor Diodes and their Measurement 179

5．1．Diodes 179

5．1．1．Silicon point-contact diodes 179

5．1．2．Germanium point-contact diodes 181

5．1．3．Low-and medium-power junction diodes 186

5．1．4．High-power junction diodes 188

5．1．5．Voltage-reference diodes 189

5．1．6．Other diodes 190

5．2．Point-contact transistors 193

5．3．Junction transistors 198

5．3．1．Early observations 198

5．3．2．Representation as a circuit element 200

5．3．3．Improved equivalent circuits 204

5．3．4．The variation of parameters with bias conditions and temperature 209

5．3．5．The variation of current gain with frequency 217

5．3．6．The distinction between a and α and their depen-dence on frequency 220

5．3．7．The maximum frequency of oscillation 221

5．3．8．Deducing the structure from the para-meters 222

5．4．Thermal runaway 223

5．5．The noise pro-perties of transistors 225

5．6．The transient response and large-signal behaviour of junction transistors 229

5．7．The measurement of the properties of junction tran-sistors 234

5．8．Photo devices 240

5．9．References 244

6．Applications 246

6．1．Applications of semiconductor diodes 246

6．2．Applications of transistors:limitations imposed by the transistor parameters and methods of control 250

6．2．1．Limitations set by the direct-current properties-The collector leakage current and d．c．stabilization-The maximum permissible collector voltage-The collector voltage at saturation 251

6．2．2．Limitations set by the dynamic properties-The dependence of current gain on frequency-The input and output impedances-The base resistance and collector capacitance-Neutraliza-tion and unilateralization 261

6．2．3．Other limitations of junction transistors 266

6．2．4．The limitations of point-contact transistors 267

6．3．Applications of point-contact transistors 268

6．4．The junction transistor as an amplifier 273

6．4．1．Small-signal amplifiers-The common-base cir-cuit-The common-emitter circuit-The common-col-lector circuit-The cascading of amplifying stages 273

6．4．2．Large-signal amplifiers 290

6．5．Oscillators and direct-current converters,using junction transistors 295

6．5．1．General 295

6．5．2．Negative-resistance oscillators 299

6．5．3．Feedback oscillators 301

6．5．4．Direct-current con-verters 309

6．6．Switching applications of junction transis-tors 313

6．6．1．General 313

6．6．2．Some non-regenerative switching circuits 314

6．6．3．Some regenerative switching circuits-General-Circuits based on symmetrical con-figurations-Asymmetrical configurations using two transistors-Blocking oscillators 321

6．6．4．The generation of sawtooth waveforms 331

6．7．References 335

Index 337

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